8 April 1999 Electronic properties of grown-in defects in semi-insulating GaAs
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Abstract
Defect structure of semi-insulating GaAs substrates manufactured by various vendors were compared using High Resolution Photo-Induced Transient Spectroscopy. A number of defect centers related to native defects and metallic impurities were detected and the concentrations of these centers were estimated.
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Roman Kozlowski, Michal Pawlowski, Pawel Kaminski, J. Cwirko, "Electronic properties of grown-in defects in semi-insulating GaAs", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344736; https://doi.org/10.1117/12.344736
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