Erbium photoluminescence in sol-gel-derived titanium dioxide films

N. V. Gaponenko; O. V. Sergeev; Jan Misiewicz; Hubert Gnaser; R. Heiderhoff; R. M. Cramer; Ludwig J. Balk; A. Dunbar; B. Hamilton

doi:10.1117/12.344743

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8 April 1999 Erbium photoluminescence in sol-gel-derived titanium dioxide films

N. V. Gaponenko, O. V. Sergeev, Jan Misiewicz, Hubert Gnaser, R. Heiderhoff, R. M. Cramer, Ludwig J. Balk, A. Dunbar, B. Hamilton

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Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344743
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Titanium dioxide films doped with erbium were prepared by sol-gel technique from Ti(OC₂H₅)₄ or Ti(OC₄H₉)₄ precursors. Room-temperature luminescence at 1.53 micrometers associated with ⁴I_13/2 - ⁴I_15/2 transitions of Er³⁺ ions in TiO₂ films derived from the first precursor has been detected. The films have a refractive index about 2.4 and may be used in the planar erbium doped waveguides.

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N. V. Gaponenko, O. V. Sergeev, Jan Misiewicz, Hubert Gnaser, R. Heiderhoff, R. M. Cramer, Ludwig J. Balk, A. Dunbar, and B. Hamilton "Erbium photoluminescence in sol-gel-derived titanium dioxide films", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344743

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