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8 April 1999 Erbium photoluminescence in sol-gel-derived titanium dioxide films
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Abstract
Titanium dioxide films doped with erbium were prepared by sol-gel technique from Ti(OC2H5)4 or Ti(OC4H9)4 precursors. Room-temperature luminescence at 1.53 micrometers associated with 4I13/2 - 4I15/2 transitions of Er3+ ions in TiO2 films derived from the first precursor has been detected. The films have a refractive index about 2.4 and may be used in the planar erbium doped waveguides.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. V. Gaponenko, O. V. Sergeev, Jan Misiewicz, Hubert Gnaser, R. Heiderhoff, R. M. Cramer, Ludwig J. Balk, A. Dunbar, and B. Hamilton "Erbium photoluminescence in sol-gel-derived titanium dioxide films", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344743
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