8 April 1999 Gate-controlled narrow-bandgap photodiodes passivated with rf sputtered dielectrics
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Abstract
Gate-controlled diodes were made by using evaporated indium electrodes overlapping the edge of mesa diodes, isolated from the surface by a layer of ZnS or by native anodic oxide of InSb or HgCdTe. The resulting 3D device characteristics with gate voltage as a parameter have been investigated. Relative spectral responses and I-V characteristics were measured at 77 K. The R0A product is used as an indicator of the dark current of photodiodes passivated with ZnS layer. A plot of R0A values versus gate potential shows that the optimum R0A values are obtained at small positive gate bias voltage. This dependence is consistent with surface recombination influencing the R0A product. The results of a 2D model for calculating gate-induce surface leakage currents due to band-to-band tunneling are presented. The exact quantitative comparison cannot be made between our results and theory, since the active tunneling area is not known.
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Jaroslaw Rutkowski, Jakub Wenus, Waldemar Gawron, Krzysztof Adamiec, "Gate-controlled narrow-bandgap photodiodes passivated with rf sputtered dielectrics", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344756; https://doi.org/10.1117/12.344756
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