8 April 1999 Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique
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Abstract
AlxGa1-xN layers with 0.02 xGa1-xN layer grown on it were evaluated by high resolution X-ray measurements, their surface morphology was observed with SEM and Nomarski optical microscope. Electrical properties of the layers were determined by C-V measurements performed at 100 kHz and 1 MHz using mercury probes. The aluminum incorporation into the solid phase during the growth process has been studied. As a result high quality AlxGa1-xN/GaN layers for electronic application have been deposited.
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Regina Paszkiewicz, Ryszard Korbutowicz, D. Radziewicz, Marek Panek, Bogdan Paszkiewicz, J. Kozlowski, Boguslaw Boratynski, Marek J. Tlaczala, "Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344729; https://doi.org/10.1117/12.344729
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