8 April 1999 Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique
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AlxGa1-xN layers with 0.02 xGa1-xN layer grown on it were evaluated by high resolution X-ray measurements, their surface morphology was observed with SEM and Nomarski optical microscope. Electrical properties of the layers were determined by C-V measurements performed at 100 kHz and 1 MHz using mercury probes. The aluminum incorporation into the solid phase during the growth process has been studied. As a result high quality AlxGa1-xN/GaN layers for electronic application have been deposited.
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Regina Paszkiewicz, Regina Paszkiewicz, Ryszard Korbutowicz, Ryszard Korbutowicz, D. Radziewicz, D. Radziewicz, Marek Panek, Marek Panek, Bogdan Paszkiewicz, Bogdan Paszkiewicz, J. Kozlowski, J. Kozlowski, Boguslaw Boratynski, Boguslaw Boratynski, Marek J. Tlaczala, Marek J. Tlaczala, "Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344729; https://doi.org/10.1117/12.344729

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