8 April 1999 Intersubband transitions in n-type quantum well systems
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Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999); doi: 10.1117/12.344724
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland
Abstract
Specific properties of intersubband transitions in n-type semiconductor quantum well structures are reviewed. Some interesting aspects of coupling of infrared radiation with intersubband transition in multiple quantum well structures are also considered. Recent achievements on intersubband emission are then discussed with specific emphasizes on the quantum cascade lasers.
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Miroslaw Zaluzny, "Intersubband transitions in n-type quantum well systems", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344724; https://doi.org/10.1117/12.344724
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KEYWORDS
Quantum wells

Electrons

Absorption

Infrared radiation

Quantum cascade lasers

Phonons

Gallium arsenide

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