G. B. Stefanovich,1 A. L. Pergament,2 F. A. Chudnovskii,3 D. O. Kikalov1
1Petrozavodsk State Univ. (Russia) 2Petrozavodsk State Univ. (Russia) and Applied Phase Transition Inc. (Russia) 3Applied Phase Transition Inc. (United States)
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The effect of laser irradiation on amorphous films of anodic vanadium oxide was studied using a YAG:Nd3+ laser at wavelength 1.06 micrometers . Irradiation was found to lower the electrical conductivity of the oxide films and modify significantly the parameters of electroforming and switching in metal/oxide/metal sandwich structures. The threshold energy for laser modification was measured to be approximately 0.3 mJ/cm2. It is shown that the changes of the electrical properties are associated with structural (crystallization) and chemical (in particular, the reduction V2O5 yields VO2) transformations and that non- thermal photo-stimulated effects play an important role in the laser modification of the vanadium oxide thin films.
G. B. Stefanovich,A. L. Pergament,F. A. Chudnovskii, andD. O. Kikalov
"Laser modification of the electrical properties of vanadium oxide thin films", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344725
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
G. B. Stefanovich, A. L. Pergament, F. A. Chudnovskii, D. O. Kikalov, "Laser modification of the electrical properties of vanadium oxide thin films," Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344725