8 April 1999 Liquid-phase epitaxial growth and characterization of In(Sb,Bi)
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The growth of In(Bi,Sb) epilayers using liquid phase epitaxy has been discussed. The layers were grown on a (111)B side of InSb substrate using Bi-rich solution in horizontal slider type boat. The growth conditions for high-quality planar epitaxial layers were determined. Mirrorlike surface morphology was observed using a Nomarski differential interference contrast microscope. Hall and resistivity measurements performed at 300 K and 77 K showed an impurity contamination of the epitaxial layers. A capacitance-voltage technique has been established to determine the distribution of doping levels on the surface of InBiSb epilayers. The results indicate that the epitaxial layers of In(Sb,Bi) are n-type at room temperature, however, the time of baking solutions (before crystallization) determined type of conductivity and the concentration of free carriers in epilayers, at 77 K. For short-time-baked solution (from 5 to 20 hours), samples were p-type (carrier concentration approximately 3(DOT)1015 cm-3) when for long- time-baked solutions (40 - 100 hours), samples were n-type (carrier concentration approximately 5(DOT)1015 cm-3). We have observed that type of conductivity depends on surface morphology of the epilayers. The type of doping and the segregation coefficient k for tin for different solutions were established. For In rich solutions tin was an acceptor with k equals 0.0012 and for Bi-rich ones tin was a donor with k equals 0.0039 at 400 degree(s)C.
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Jolanta Raczynska, Jolanta Raczynska, Antoni Rogalski, Antoni Rogalski, Jaroslaw Rutkowski, Jaroslaw Rutkowski, K. Fronc, K. Fronc, "Liquid-phase epitaxial growth and characterization of In(Sb,Bi)", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344708; https://doi.org/10.1117/12.344708


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