8 April 1999 Mechanisms of heteroepitaxial growth of the (Ba1-xSrx)TiO3//MgO(001) thin ferroelectric films
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Abstract
Heteroepitaxial (Ba0.85Sr0.15)TiO3, (Ba0.6Sr0.4)TiO3 and (Ba0.7Sr0.3)TiO3 thin films of thickness from 20 to 1200 nm were obtained by the method of rf sputtering of stoichiometric targets. The (001) planes of MgO single crystals of thickness 0.5 mm served as substrates. The films obtained exhibited ferroelectric properties closely similar to those of the ceramic targets. Depending on the sputtering conditions, heteroepitaxial films of various degree of perfection of the crystalline structure were obtained. The measure of the structural perfection of the thin films was taken to be the mean dimension D of the crystallites and the mean value <(Delta) d/d> of the lattice strains in the crystallites in the direction normal to the substrate. It has been found from the TEM measurements that two mechanisms governed the thin film growth, namely: (1) the insular growth mechanism exhibited by the films deposited at temperature (TS) slightly higher than critical temperature for the heteroepitaxy process (TCR) and (2) the layer-by-layer growth of the heteroepitaxial films observed for the substrate temperature of TS >= TCR. With increase in pressure of the working gas and (or) temperature of the substrate the insular growth transforms to layer-by-layer growth.
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Zygmunt Surowiak, Zygmunt Surowiak, Dionizy Czekaj, Dionizy Czekaj, Vladimir P. Dudkevich, Vladimir P. Dudkevich, } "Mechanisms of heteroepitaxial growth of the (Ba1-xSrx)TiO3//MgO(001) thin ferroelectric films", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344763; https://doi.org/10.1117/12.344763
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