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8 April 1999 Partially strained Si1-xGex/Si structures investigated by photoreflectance spectroscopy
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Abstract
Partially strained Si1-xGex epilayers with germanium composition up to 25% have been studied by room temperature photoreflectance spectroscopy. Observed transitions were identified as E1 and E0' direct transitions at Si1-xGex structure. The E1 transition energy dependence on alloy composition shows that the studied Si1-xGex epilayers are partially relaxed and the degree of relaxation differ from one structure to another. For the germanium content close to 10% the crossing between E1 and E0' optical transitions was observed.
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Piotr Sitarek, Jan Misiewicz, and Krzysztof Nauka "Partially strained Si1-xGex/Si structures investigated by photoreflectance spectroscopy", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344737
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