Partially strained Si1-xGex/Si structures investigated by photoreflectance spectroscopy

Piotr Sitarek; Jan Misiewicz; Krzysztof Nauka

doi:10.1117/12.344737

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8 April 1999 Partially strained Si_1-xGe_x/Si structures investigated by photoreflectance spectroscopy

Piotr Sitarek, Jan Misiewicz, Krzysztof Nauka

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Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344737
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Partially strained Si_1-xGe_x epilayers with germanium composition up to 25% have been studied by room temperature photoreflectance spectroscopy. Observed transitions were identified as E₁ and E₀' direct transitions at Si_1-xGe_x structure. The E₁ transition energy dependence on alloy composition shows that the studied Si_1-xGe_x epilayers are partially relaxed and the degree of relaxation differ from one structure to another. For the germanium content close to 10% the crossing between E₁ and E₀' optical transitions was observed.

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Piotr Sitarek, Jan Misiewicz, and Krzysztof Nauka "Partially strained Si_1-xGe_x/Si structures investigated by photoreflectance spectroscopy", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344737

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