Simulation of the early stages of thermal SiO2 growth

Kazimierz Jerzy Plucinski

doi:10.1117/12.344733

8 April 1999 Simulation of the early stages of thermal SiO₂ growth

Kazimierz Jerzy Plucinski

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344733
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

The kinetics of the silicon oxidation was analyzed based on the fractal mechanism of oxidation. The transport of the oxidants through consolidated region was solved based on continuous equation. Confirmation was made to some reported experimental observations.

Citation Download Citation

Kazimierz Jerzy Plucinski "Simulation of the early stages of thermal SiO₂ growth", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344733

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