8 April 1999 Simulation of the early stages of thermal SiO2 growth
Author Affiliations +
Abstract
The kinetics of the silicon oxidation was analyzed based on the fractal mechanism of oxidation. The transport of the oxidants through consolidated region was solved based on continuous equation. Confirmation was made to some reported experimental observations.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazimierz Jerzy Plucinski, Kazimierz Jerzy Plucinski, } "Simulation of the early stages of thermal SiO2 growth", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344733; https://doi.org/10.1117/12.344733
PROCEEDINGS
5 PAGES


SHARE
Back to Top