8 April 1999 Simulation of the early stages of thermal SiO2 growth
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The kinetics of the silicon oxidation was analyzed based on the fractal mechanism of oxidation. The transport of the oxidants through consolidated region was solved based on continuous equation. Confirmation was made to some reported experimental observations.
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Kazimierz Jerzy Plucinski, Kazimierz Jerzy Plucinski, } "Simulation of the early stages of thermal SiO2 growth", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344733; https://doi.org/10.1117/12.344733

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