8 April 1999 Structure of the Si-SiO2 interface
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Abstract
The band bending fluctuation and tunneling models of the anomalous dispersion of the surface-state conductance curves are analyzed, based on the result of the analysis of oxidation process.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazimierz Jerzy Plucinski, Kazimierz Jerzy Plucinski, } "Structure of the Si-SiO2 interface", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344732; https://doi.org/10.1117/12.344732
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