30 April 1999 Experimental verification of selected dynamic properties of semiconductor laser
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Proceedings Volume 3730, Optoelectronic and Electronic Sensors III; (1999); doi: 10.1117/12.346874
Event: Optoelectronic and Electronic Sensors III, 1998, Jurata, Poland
Abstract
The hitherto obtained results of the research concerning some non-stationary phenomena observed during the radiation emission by the semiconductor laser are presented in the paper. It mainly concerns the damped oscillations of the output signal from laser, as well as the delay of the output laser impulse in relation to the current controlling the working laser diode. The delay time values for a given frequency interval of the signal controlling the laser diode at work were experimentally determined. Using the method of linear regression, an analytical equation was modeled, which connected the delay of the laser impulse t0 in relation to the polarizing current IB. Using the least square method, the values of the above mentioned equation ratios were determined. The phenomena presented in the paper are relevant for the processing reliability of the laser diode in the examined section of a measuring track.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Przemyslaw Otomanski, "Experimental verification of selected dynamic properties of semiconductor laser", Proc. SPIE 3730, Optoelectronic and Electronic Sensors III, (30 April 1999); doi: 10.1117/12.346874; https://doi.org/10.1117/12.346874
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KEYWORDS
Semiconductor lasers

Oscilloscopes

Photodiodes

Laser damage threshold

Electrons

Reliability

Bismuth

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