5 February 1999 Optical reflection in semiconductor structures modulated by radio-frequency electric fields
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Proceedings Volume 3732, ICONO '98: Laser Spectroscopy and Optical Diagnostics: Novel Trends and Applications in Laser Chemistry, Biophysics, and Biomedicine; (1999) https://doi.org/10.1117/12.340003
Event: ICONO '98: Laser Spectroscopy and Optical Diagnostics: Novel Trends and Applications in Laser Chemistry, Biophysics, and Biomedicine, 1998, Moscow, Russian Federation
Abstract
We propose a contactless technique of modulation spectroscopy for semiconductors which is based on the AC electric field effect on the probing light beam reflection. This technique allows one to investigate the distribution of both built-in and induced electric fields as well as the electron-hole interaction effects in various layers of the semiconductor structure. The measured spectra are explained by a combination of the interband transitions in the high-field (Franz-Keldysh effect) and low-field regimes, the transitions via exciton states and the temperature effect. The model is developed which allows one to describe quantitatively the spectra observed on the modulation-doped heterostructures GaAs/AlGaAs.
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Oleg A. Ryabushkin, Vladimir A. Sablikov, "Optical reflection in semiconductor structures modulated by radio-frequency electric fields", Proc. SPIE 3732, ICONO '98: Laser Spectroscopy and Optical Diagnostics: Novel Trends and Applications in Laser Chemistry, Biophysics, and Biomedicine, (5 February 1999); doi: 10.1117/12.340003; https://doi.org/10.1117/12.340003
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