15 March 1999 Photoprocesses on the surface of nanoporous semiconductors
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Proceedings Volume 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures; (1999) https://doi.org/10.1117/12.342369
Event: ICONO '98: Laser Spectroscopy and Optical Diagnostics: Novel Trends and Applications in Laser Chemistry, Biophysics, and Biomedicine, 1998, Moscow, Russian Federation
Abstract
Photoinduced processes on surfaces of nanoporous semiconductors, such as Si and GaAs, are experimentally investigated. It was shown the possibility of change and control of desorption states on porous surface and, consequently, luminescence properties under laser irradiation by IR and visible light.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri A. Bykovsky, Yuri A. Bykovsky, A. A. Chistyakov, A. A. Chistyakov, G. E. Kotkovskii, G. E. Kotkovskii, M. B. Kuznetsov, M. B. Kuznetsov, V. A. Karavanskii, V. A. Karavanskii, } "Photoprocesses on the surface of nanoporous semiconductors", Proc. SPIE 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures, (15 March 1999); doi: 10.1117/12.342369; https://doi.org/10.1117/12.342369
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