15 March 1999 Solitary wave of point defect formation and wave of impact ionization propagated under intensive generation of electron hole pairs in semiconductors and dielectrics
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Proceedings Volume 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures; (1999) https://doi.org/10.1117/12.342340
Event: ICONO '98: Laser Spectroscopy and Optical Diagnostics: Novel Trends and Applications in Laser Chemistry, Biophysics, and Biomedicine, 1998, Moscow, Russian Federation
Abstract
The model of the solitary defect formation wave (DFW) and the model of the impact ionization wave (IIW) ignited and propagated in semiconductors and dielectrics under intensive laser generation of electron-hole pairs are developed in close analogy with combustion wave. The characteristics of the DFW: critical laser intensity of DFW ignition, the shape, velocity of propagation and point defect concentration created by DFW are determined analytically. Analogous characteristics are obtained for the IIW. Quantitative interpretation of experimental results on modification of crystalline silicon surface by a train of picosecond laser pulses is carried out on the base of results obtained.
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Vladimir I. Emel'yanov, Alexandra V. Rogacheva, "Solitary wave of point defect formation and wave of impact ionization propagated under intensive generation of electron hole pairs in semiconductors and dielectrics", Proc. SPIE 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures, (15 March 1999); doi: 10.1117/12.342340; https://doi.org/10.1117/12.342340
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