15 March 1999 Theory of single-pulse laser amorphization of semiconductors
Author Affiliations +
Proceedings Volume 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures; (1999) https://doi.org/10.1117/12.342363
Event: ICONO '98: Laser Spectroscopy and Optical Diagnostics: Novel Trends and Applications in Laser Chemistry, Biophysics, and Biomedicine, 1998, Moscow, Russian Federation
Abstract
The theory of amorphization under pulsed laser melting of surfaces of crystalline semiconductors, based on mechanism of point defect capture and formation of nanometer periodic defect-deformational structures, is developed. The critical defect concentration and critical solidification front velocity at exceeding of which amorphization occurs are determined. The hierarchy of structural transformations at surface after melt solidification observed with decrease of laser fluency is analytically described.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir I. Emel'yanov, Ivan M. Panin, "Theory of single-pulse laser amorphization of semiconductors", Proc. SPIE 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures, (15 March 1999); doi: 10.1117/12.342363; https://doi.org/10.1117/12.342363
PROCEEDINGS
13 PAGES


SHARE
Back to Top