7 September 1999 Electrical and optical properties of indium tin oxide films prepared by pulsed magnetron sputtering
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Abstract
Indium tin oxide (ITO) thin films were prepared by unipolar and bipolar dc-pulsed magnetron sputtering in a mixture of argon and oxygen onto the unheated glass substrates. The target of ITO with 10 weight percent tin is used. The influences of polar modes, output frequencies, and on times and off times on the optical, electrical and structural properties of ITO films are investigated. The correlations between the deposition parameters and the film properties are discussed. An optimal condition based on the polar mode and frequency of reactive dc-pulsed sputtering for obtaining the high transmittance and low resistivity of ITO films is suggested.
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Hui-Wen Chou, W. J. Lee, Rung-Ywan Tsai, Yuen Keun Fang, and C. C. Chen "Electrical and optical properties of indium tin oxide films prepared by pulsed magnetron sputtering", Proc. SPIE 3738, Advances in Optical Interference Coatings, (7 September 1999); doi: 10.1117/12.360113; https://doi.org/10.1117/12.360113
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