The binary lithography combined with precise control of RIE (Reactive Ion Etch) could fabricate the 8-level blazed gratings with the reflective efficiency above 80% in recent years. The pixel size of the 8-level grating is often designed to be 32 microns or even larger due to the manipulation error of the mask-aligner. By the excellent augmentation of the mask-stepper, which is popular in IC industry, the smaller pixel size or the higher-order levels of the gratings could be achieved ideally. Unfortunately, we hardly used the mask- stepper to meet the precision requirement for the excuse of process or material incompatibilities in standard IC process. Herein, we used a 'binary deposition method' as the counterpart of the current binary optics or binary etching method. By the standard CMOS process, all the designers have to do is to edit the layouts of multiple accumulated layers of poly-silicon and metal with a micrometer variation between each two planar layers. A classical demonstration for the 8- level gratings by the standard CMOS layers was depicted in this paper. Therefore, the sub-micron precision of the lithographic stepper is now practically available. Moreover, it even needs no post processing after the CMOS fabrication. A grating layout by the binary deposition method is under the foundry service provided by Chip Implementation Center (CIC), National Science Council, Taiwan, Republic of China. By the appropriate layout design, other reflective optical lenses have chances to be done as well as the blazed gratings similarly.