7 May 1999 Fabrication of multilevel diffractive elements in SiO2 by electron-beam lithography and proportional etching
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Proceedings Volume 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99); (1999) https://doi.org/10.1117/12.347805
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '99), 1999, Yokohama, Japan
Abstract
A new negative low-contrast electron beam resist X AR-N 7700/18 is used in multilevel structuring with direct electron beam exposure. The developed multilevel resist profiles are transferred into SiO2 substrates with reactive ion etching (RIE) and the desired profile depths are achieved by a proper adjustment of the pressure during the etching process. The tolerance of profile depth errors is found to be less than 2.5%. Examples of multilevel pixel-structured gratings and diffractive lenses are given.
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Pasi Laakkonen, Jari Lautanen, Janne Simonen, Jari Pekka Turunen, Veli-Pekka Leppanen, Timo Jaaskelainen, "Fabrication of multilevel diffractive elements in SiO2 by electron-beam lithography and proportional etching", Proc. SPIE 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99), (7 May 1999); doi: 10.1117/12.347805; https://doi.org/10.1117/12.347805
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