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7 May 1999 Nanoscale fabrication by interferometric lithography
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Proceedings Volume 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99); (1999)
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '99), 1999, Yokohama, Japan
Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching (both by reactive-ion etching and by KOH wet etching) and with 3-D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures (as small as 10 nm) over large areas and with good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk (to linewidths of approximately 200 nm), resonant enhanced (approximately 50 nm linewidths) and asymmetry and splitting (linewidths less than 20 nm).
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Saleem H. Zaidi and Steven R. J. Brueck "Nanoscale fabrication by interferometric lithography", Proc. SPIE 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99), (7 May 1999); doi: 10.1117/12.347832;

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