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7 May 1999 Nanoscale fabrication by interferometric lithography
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Proceedings Volume 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99); (1999) https://doi.org/10.1117/12.347832
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '99), 1999, Yokohama, Japan
Abstract
Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching (both by reactive-ion etching and by KOH wet etching) and with 3-D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures (as small as 10 nm) over large areas and with good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk (to linewidths of approximately 200 nm), resonant enhanced (approximately 50 nm linewidths) and asymmetry and splitting (linewidths less than 20 nm).
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Saleem H. Zaidi and Steven R. J. Brueck "Nanoscale fabrication by interferometric lithography", Proc. SPIE 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99), (7 May 1999); doi: 10.1117/12.347832; https://doi.org/10.1117/12.347832
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