Paper
7 May 1999 Three-dimensional optical recording with the ferroelectric domain reversal in a Ce-doped SBN:75 crystal: experiment and calculation
Author Affiliations +
Proceedings Volume 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99); (1999) https://doi.org/10.1117/12.347737
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '99), 1999, Yokohama, Japan
Abstract
We have developed a bit-oriented three-dimensional domain memory with a photorefractive crystal. A Ce-doped SBN is used to record a bit data. The ferroelectric polarization is reversed by a focused laser beam in a crystal with the temperature at 38 degrees Celsius to form a bit data. The recorded domain is stable at 15 degrees Celsius. The data is read as the refractive index change induced by spontaneous polarization via Pockels effect. We show the domain image observed with phase contrast microscope. We also show the computer simulated images. The result in experiment is in good agreement with the simulated result.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaki Hisaka, Hidekazu Ishitobi, and Satoshi Kawata "Three-dimensional optical recording with the ferroelectric domain reversal in a Ce-doped SBN:75 crystal: experiment and calculation", Proc. SPIE 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99), (7 May 1999); https://doi.org/10.1117/12.347737
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KEYWORDS
Crystals

Polarization

Refractive index

Holography

Laser crystals

Computer simulations

Optical recording

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