28 April 1999 193-nm lithography: new challenges, new worries
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Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346900
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
Photolithography has now moved forward to such an extent that we are considering imaging the 130nm and 100nm technology nodes with optical system, unthinkable a handful of years ago. To do this we have been using the biggest control knob we know, wavelength. The latest wavelength to be introduced into production will be 193nm which will arrive with full field scanners this year. To image using 193nm we have had to radically change the polymer systems we use due to high absorption with conventional chemistries. This has led to materials that will be the most difficult to integrate into manufacturing that we have ever faced. The primary challenge we encounter is the high resist thickness loss in the pattern transfer steps. This is primarily due to low etch resistance of the materials in use but we will also show that photochemical deprotection of the resist during etch has a contribution. One approach to overcome this is to use significantly thicker resist films, this leads to its own problems with pattern collapse a major worry which could easily become a limiting factor in this technique.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin McCallum, Wolf-Dieter Domke, Jeff D. Byers, David R. Stark, "193-nm lithography: new challenges, new worries", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346900; https://doi.org/10.1117/12.346900
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