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28 April 1999 Effect of photoresist contrast on intrafield critical dimensions in sub-half-micron optical lithography
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Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346896
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
Resist contrast is related to usable depth-of-focus (UDOF) for I-line and DUV stepper lenses through the resists process linearity function. Results, supported by simulations in the resist image, show that stepper field center-edge critical dimensional offsets, which decrease UDOF, increase as resist contrast decreases. Measurements on intra-field CDs show that their uniformity decreases as processes reach non-linear processing regimes.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christine Wallace, Brian Martin, and Graham G. Arthur "Effect of photoresist contrast on intrafield critical dimensions in sub-half-micron optical lithography", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); https://doi.org/10.1117/12.346896
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