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28 April 1999 Effect of reticle manufacturing quality on full chip optical proximity correction
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Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346894
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
Critical Dimensions (CD) are measured on reticles which are written incorporating an optical proximity correction for pitch dependent linewidth bias. Reticles are manufactured on different generations of laser write tools and the result in terms of mean ann range of dimensions compared. Lithography simulation is used to test the response of reticle CD variation at wafer level.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian Martin and Graham G. Arthur "Effect of reticle manufacturing quality on full chip optical proximity correction", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); https://doi.org/10.1117/12.346894
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