28 April 1999 Performance of 193-nm resists based on alicyclic methacrylate and cyclo-olefin systems
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Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346883
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
Among the chemistries/polymers reported for the 193nm photoresist applications, methacrylate copolymers consisting of 2-methyl-2-adamantane methacrylate and mevalonic lactone methacrylate and cycloolefin polymers derived from derivatives of norbornene have shown promising results. We have studied the lithographic properties of these two but different promising chemistries. Both system offer linear resolutions down to 0.13 micrometers using conventional 193 nm illumination and high sensitivity at standard developer conditions. While the methacrylate based system shows best performance on substrates with bottom coats, the cycloolefin-Maleic anhydride alternate copolymer based resists performs well on bare silicon as well as substrates with bottom coats. The etch rates of the methacrylate and cycloolefin based resists were found to be 1.4 and 1.3 times relative to that of KrF resist APEX-E. Further, new polymers consisting of isobornyl and alkyl ether chains on the ester groups of norbornene carboxylate were made in order to decrease the glass-transition temperatures of the norbornene-maleic anhydride type polymers. These results will be included and discussed in detail.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Munirathna Padmanaban, Michelle M. Cook, Dana L. Durham, Dinesh N. Khanna, Axel Klauck-Jacobs, Joseph E. Oberlander, M. Dalil Rahman, and Ralph R. Dammel "Performance of 193-nm resists based on alicyclic methacrylate and cyclo-olefin systems", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346883; https://doi.org/10.1117/12.346883
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