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28 April 1999 Understanding advanced lithographic materials: challenges and new characterization techniques
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Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999)
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
The implementation of new resist materials and advanced lithography processes requires new characterization techniques in order to understand the behavior of these systems and optimize their design. Examples are presented on two recent 193nm experimental formulations using three different characterization techniques, namely Modulated- Temperature DSC, in-situ ellipsometry and dielectric analysis. The results obtained provide new experimental evidence of the diffusion and reaction mechanisms involved in chemically amplified formulations.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Jean Paniez, Benedicte P. Mortini, Severine Gally, Alain Prola, Charles Rosilio, and Pierre-Olivier Sassoulas "Understanding advanced lithographic materials: challenges and new characterization techniques", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999);

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