28 April 1999 Use of a MEBES tool to manufacture 180-nm reticles
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Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346884
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
Leading-edge technologies require continually shrinking design grids due to the industry demands for decreasing minimum feature size and higher resolution. Using conventional raster-scanned exposure tools to place these patterns on photomasks results in longer writing times, because linear decreases in address result in exponential increases in writing time. This phenomenon can be compensated throughput at small addresses while retaining lithographic quality.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles A. Sauer, "Use of a MEBES tool to manufacture 180-nm reticles", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346884; https://doi.org/10.1117/12.346884
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