23 April 1999 Characterization of metal profile notching as a result of electron shading in a high-density plasma etcher
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Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346245
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
In today's high volume manufacturing of semiconductor devices large amounts of capital are required to establish and operate production facilities. Therefore, IC manufacturers are now `cloning' processes to enable products and technologies to be transferred to other sites to provide optimum production flexibility. Unfortunately, these processes cannot always simply be lifted and `dropped' into a new facility, even if identical tools are used. During a process and product transfer from one Motorola fab to another the metal etch process exhibited some unexpected complications as severely undercut metal profiles were seen on certain products. Although initially not very well understood the reason for this defect turned out to be ion deflection due to electron shading. This paper will show that by applying the relevant statistical tools this mechanism can be controlled or even completely eliminated. Adjustment of plasma parameters will result in a process which yields excellent profile control.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fred Smits, Fred Smits, } "Characterization of metal profile notching as a result of electron shading in a high-density plasma etcher", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346245; https://doi.org/10.1117/12.346245
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