23 April 1999 Critical dimension and oxide damage control during poly/polycide etching on a TCP9400SE using the SEERS plasma diagnostic system
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Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346238
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
The Self Exited Electron Resonance Spectroscopy is a new method of plasma characterization that gives access to collision rate, electron density, sheath width and bulk power. We used that method on a TCP9400SE for Poly/Polycide etching in order to optimize the CD control. To do that, we first checked all possible correlation's between the plasma parameters and the resulting effects on the wafers like side wall polymerization, CD gain, etchrate, oxide loss and oxide damage. Those results were first obtained on test wafers and were then rechecked on product wafers. Both series of experiments were consistent and allowed us to find the mechanism for the side wall polymers growth. Then we could identify the electron density value that gave the best CD control.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michel Derie, Michel Derie, } "Critical dimension and oxide damage control during poly/polycide etching on a TCP9400SE using the SEERS plasma diagnostic system", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346238; https://doi.org/10.1117/12.346238
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