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23 April 1999 DOE analysis of layout/process interactions in bipolar Schottky technology
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Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346232
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
In this paper, we demonstrate a rigorous and planned design of experiment (DOE) approach to process development with an aim to providing a fully characterized and manufacturable process in a single cycle of silicon. The key to this approach is to examine design rule, design practice and physical attributes and their interactions with the same methodology to ensure that product requirements and variations are fully manufacturable. As a case study, we describe the development and analysis of a Schottky device suite for an analog bipolar technology. We discuss the detailed pre-processing preparation, which has a strong Technology Computer Aided Design element, resulting in a coordinated DOE mask set and experimental DOE plan. We then discuss examples of analyzed data looking at the individual and combined attributes of design rules, design practices and manufacturing sensitivities. We also describe the way in which the methodology is flexible enough to encourage and enable the development of novel devices (in this case a selective field threshold adjust implanted diode) with a view to immediate implementation on first silicon.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alastair McGibbon, Adil Shafi, Nigel Cameron, Chun Ng, and Mark Redford "DOE analysis of layout/process interactions in bipolar Schottky technology", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); https://doi.org/10.1117/12.346232
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