23 April 1999 Dry etch uniformity and optimization using graphical and DOE techniques
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Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346241
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
A uniform TEGAL 903E plasma oxide etch process, has been developed using a novel analytical technique. The process has been implemented successfully in the manufacturing arena. The novel analytical technique involves executing statistically designed experiments, then visually analyzing wafer uniformity topography maps. Modeling uniformity is usually done using a summary metric of standard deviation or normalized max-min values. This work demonstrates a weakness in this approach and presents a new strategy.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John Ian Doohan, Martin Fallon, I. Thomson, Richard Boyle, J. Norval, "Dry etch uniformity and optimization using graphical and DOE techniques", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346241; https://doi.org/10.1117/12.346241
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