23 April 1999 Embedded optical sensors and data processing for thin film deposition
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Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346246
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
Two sensor techniques and a data analysis algorithm have been investigated, to assess their suitability for in-situ process monitoring and integrated metrology in semiconductor manufacture. The first sensor is a prototype system which uses two laser beams of different wavelength to module the surface temperature of a wafer. The ratio of detected thermal radiances at the two wavelengths is ideally independent of wafer emissivity. Initial measurements on differently-processed silicon wafers in the temperature range 620 - 1000 degree(s)C show systematic errors of the order 10 degree(s)C. The second sensor is a spectroscopic ellipsometry system fully integrated onto a low pressure chemical vapor deposition reactor for monitoring and controlling growth of silicon-germanium (SiGe) alloys. Algorithms for determining alloy composition and film thicknesses during growth are discussed. The use of a sample-based particle filter based on Bayesian statistics for tracking a semiconductor process is described for the first time.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. Robbins, David J. Robbins, Alan Marrs, Alan Marrs, Christopher Pickering, Christopher Pickering, Allister W. Dann, Allister W. Dann, John L. Glasper, John L. Glasper, John Russell, John Russell, } "Embedded optical sensors and data processing for thin film deposition", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346246; https://doi.org/10.1117/12.346246
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