23 April 1999 High-voltage resurf DMOS process development using covariance-based response surfaces
Author Affiliations +
Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346231
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
This paper compares the performance of quadratic and covariance models for a RESURF device. TCAD is used in conjunction with a CCI design and both response surfaces and response variances are compared for both models. Experimentally measured distributions are compared with those predicted by TCAD and the differences used to help identify other possible sources of variation.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark Redford, Martin Fallon, Anthony J. Walton, Z. A. Shafi, Jim McGinty, Ian Underwood, "High-voltage resurf DMOS process development using covariance-based response surfaces", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346231; https://doi.org/10.1117/12.346231
PROCEEDINGS
11 PAGES


SHARE
RELATED CONTENT


Back to Top