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23 April 1999 In-situ UV absorption CF2 sensor for reactive ion etch process control
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Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346237
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
In this article, we report the use of ultraviolet absorption spectroscopy for CF2 detection in a large area parallel plate capacitively coupled reactive ion etching system and correlation of data from this and other plasma sensors to the etch rate of SiO2 and a-Si in CF4/CHF3 plasmas. We present statistical models for estimation of a- Si etch rate in the operational regime in which the CF2 concentration is in the range of 0.4 approximately 1.6 volume % of total gas in the etch chamber. A small change in CF2 concentration translates into quite a large variation in terms of SiO2/a-Si etch selectivity, and this makes CF2 concentration a useful variable in process control. We will show statistically that silicon etch rates can be very well estimated by using sensors for CF2 and fluorine.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hunsuk Kim and Fred Lewis Terry Jr. "In-situ UV absorption CF2 sensor for reactive ion etch process control", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); https://doi.org/10.1117/12.346237
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