Use of poly test wafer volume fraction as an input to control a diffusion poly doping process

Stephen McDade

doi:10.1117/12.346247

23 April 1999 Use of poly test wafer volume fraction as an input to control a diffusion poly doping process

Stephen McDade

Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346247
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

The process control of lightly doping polysilicon with Phosphine can be difficult. In high volume semiconductor manufacturing the equipment downtime and poor process performance associated with this type of process is expensive. Utilizing the volume fraction of the polysilicon test wafers, as measured on an ellipsometer, as input prior to dope, improvements to process performance and control as well as equipment downtime can be achieved.

Citation Download Citation

Stephen McDade "Use of poly test wafer volume fraction as an input to control a diffusion poly doping process", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); https://doi.org/10.1117/12.346247

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