27 April 1999 FIB voltage-contrast localization and analysis of contact via chains
Author Affiliations +
Abstract
Usually, thick passivations avoid access to voltage contrast localization of electrical opens and shorts. In many cases, depassivation is not a suitable method, since it might influence the failure structure by preparation artifacts. FIB allows both to do in-situ voltage contrast imaging, to put certain parts of the circuitry on ground and to depassivation locally. In-situ failure characterization is also performed by FIB-cross-sectioning and imaging, as it is shown in the following few representative examples.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter J. Jacob, Peter J. Jacob, Elko Doering, Elko Doering, } "FIB voltage-contrast localization and analysis of contact via chains", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346925; https://doi.org/10.1117/12.346925
PROCEEDINGS
7 PAGES


SHARE
Back to Top