27 April 1999 Improvement in diffusion barrier properties of PECVD W-N thin film by low-energy BF2+ implantation
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Proceedings Volume 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing; (1999); doi: 10.1117/12.346932
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
The structural and electrical properties of BF2+ implanted PECVD tungsten nitride thin film were investigated. After BF2+ implantation with 40keV and 1 X 1017 B ions/cm2, W-B+-N layer was formed at the surface region of W-N films. The ternary layer maintained the microcrystalline state and prevented nitrogen out-diffusion form W-N thin film after annealing at 800 degrees C for 30 min. The overall electrical resistivity of W-B+-N/W-N thin film is 200 (mu) (Omega) cm, which is higher than that of W-N thin film because of forming the ternary phase. BF2+ implanted tungsten nitride thin film improved thermal stability against Cu diffusion more than W-N thin film.
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Dong Joon Kim, YongTae Kim, Young K. Park, Hyun Sang Sim, Jong-Wan Park, "Improvement in diffusion barrier properties of PECVD W-N thin film by low-energy BF2+ implantation", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346932; https://doi.org/10.1117/12.346932
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KEYWORDS
Thin films

Annealing

Diffusion

Copper

Crystals

Ions

Boron

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