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27 April 1999 Method for yield prediction using a SEM-ADC
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Abstract
Yield prediction using scanning electron microscope- automatic defect classification has the advantage of accuracy as compared with that using optical ADC because SEMs have higher resolving power and give us more information of particle/pattern-defect shape and surface texture than optical microscopes. We have proposed a method to predict die and wafer yield using SEM-ADC, it features (1) defect sampling which is performed in terms of die groups, (2) defect classification which enable us to get killer rates of defects, and (3) yield prediction taking account of the effects of prior level defects.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fumio Mizuno and Seiji Isogai "Method for yield prediction using a SEM-ADC", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); https://doi.org/10.1117/12.346933
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