27 April 1999 Oxide degradation and charging damage by dry etch processing
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Proceedings Volume 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing; (1999); doi: 10.1117/12.346921
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
Plasma induced charging damage and oxide degradation after metal and poly etch and photoresist strip were studied using unpatterned oxide wafer technique. The time dependence of plasma induced charging, internal oxide damage oxide damage and charging 'fingerprint' were investigated for poly etch, metal etch processes. Comparison of oxide charging monitor results and SPIDER antennae structures data for photoresist strip process is presented.
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Dumitru Gh. Ulieru, "Oxide degradation and charging damage by dry etch processing", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346921; https://doi.org/10.1117/12.346921
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