27 April 1999 Role of stem as a high-resolution failure analysis tool for semiconductor manufacturing technologies
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Proceedings Volume 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing; (1999); doi: 10.1117/12.346917
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
In this paper, we demonstrate the way in which techniques available on a scanning transmission electron microscope (STEM), particularly Z-contrast imaging and energy- dispersive x-ray microanalysis, can be applied successfully in the characterization and failure analysis of super-micron semiconductor manufacturing technologies. Following a general description of the techniques, two separate examples are given: Firstly, the detailed characterization of a low temperature coefficient of resistance SiCCr thin film where a complex microstructure covering a total thickness of approximately 100 angstrom is revealed and described. Secondly, we describe the way in which STEM was used to detect and observe nanometer-sized PtSi spiking in doped epilayers - the root cause of an NMOS sub-threshold leakage issue.
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Alastair McGibbon, Richard Boyle, Mark Redford, "Role of stem as a high-resolution failure analysis tool for semiconductor manufacturing technologies", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346917; https://doi.org/10.1117/12.346917
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