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27 April 1999 Theoretical and practical aspects of remote temperature measurement in semiconductor manufacturing
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Abstract
The general principles of operation of passive and active pyrometry methods are considered. The usefulness of ratio, multi-ratio, approximation, and enhanced emissivity methods to unknown and changing emissivity situations is analyzed. A spectral functional for the emissivity is postulated to give the theoretical limit of accuracy of any passive method. A novel passive-active method, with accuracy better than 1 percent, for semiconductor wafer measurement is described and demonstrated through on-line measurement in Rapid Thermal Chemical Vapor Deposition process.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Evgeny Glazman, A. Glazman, and Assaf Thon "Theoretical and practical aspects of remote temperature measurement in semiconductor manufacturing", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); https://doi.org/10.1117/12.346914
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