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Implementation of chemically amplified resist on mask technology below 0.6-μm feature using high-acceleration voltage e-beam system
Auxiliary pattern generation to cancel unexpected images at sidelobe overlap regions in attenuated phase-shift masks
Primary evaluation of proximity and resist heating effects observed in high-acceleration voltage e-beam writing for 180-nm-and-beyond rule reticle fabrication
Electron-beam lithography simulation for mask making: III. Effect of spot size, address grid, and raster writing strategies on lithography performance with PBS and ZEP-7000