25 August 1999 Attenuated phase-shifting mask in ArF lithography
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360213
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
It was demonstrated that the DOF obtained using the Att-PSM was 0.5 micrometer for 150 nm hole pattern, whereas that obtained using a binary mask was 0.2 micrometer. Durability of the film subjected to ArF laser irradiation is also investigated, and no significant change is observed in both phase and transmittance. It was indicated that the attenuated phase-shifting mask (Att-PSM) is effective and realistic in ArF lithography. Factors in CD control such as mask error factor (MEF), phase and transmittance are discussed. It is important to reduce MEF for hole pattern, since MEF in experiment was over 3 while it is desired to be less than 1.8. Att-PSM with higher transmittance and higher NA are effective to reduce MEF. On the other hand, MEF for line pattern is small enough for use in production. The control of phase and transmittance are also an important issue. It is estimated that phase error of 3 deg and transmittance error of 0.3% are required.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junji Miyazaki, Junji Miyazaki, Masaya Uematsu, Masaya Uematsu, Keisuke Nakazawa, Keisuke Nakazawa, Takahiro Matsuo, Takahiro Matsuo, Toshio Onodera, Toshio Onodera, Tohru Ogawa, Tohru Ogawa, } "Attenuated phase-shifting mask in ArF lithography", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360213; https://doi.org/10.1117/12.360213
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