Cost-effective DUV PSM process

San-De Tzu; Ching Siun Chiu; Chue-San Yoo; Jia-Jing Wang

doi:10.1117/12.360217

25 August 1999 Cost-effective DUV PSM process

San-De Tzu, Ching Siun Chiu, Chue-San Yoo, Jia-Jing Wang

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360217
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

A novel manufacturable and cost-effective DUV PSM process is developed and implemented in .18 micrometer and .15 micrometer PSM technology. Our novel process requires one resist coating and E-Beam exposure, hence lower cost and mis-alignment-free in chromium layer and shifter layer can be realized. The details of E-Beam lithographic process and core process are further discussed in this paper. The CD proximity is around 13 nm (the duty ratio of contact arrays is from 1:1 to 1:5) and linearity results are in 30 nm (contact size is from 0.8 micrometer to 1.2 micrometer on mask). Besides, the mechanisms of the defect sources are identified and defect counts are under controllable.

Citation Download Citation

San-De Tzu, Ching Siun Chiu, Chue-San Yoo, and Jia-Jing Wang "Cost-effective DUV PSM process", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360217

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available