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25 August 1999 Cost-effective DUV PSM process
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999)
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
A novel manufacturable and cost-effective DUV PSM process is developed and implemented in .18 micrometer and .15 micrometer PSM technology. Our novel process requires one resist coating and E-Beam exposure, hence lower cost and mis-alignment-free in chromium layer and shifter layer can be realized. The details of E-Beam lithographic process and core process are further discussed in this paper. The CD proximity is around 13 nm (the duty ratio of contact arrays is from 1:1 to 1:5) and linearity results are in 30 nm (contact size is from 0.8 micrometer to 1.2 micrometer on mask). Besides, the mechanisms of the defect sources are identified and defect counts are under controllable.
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San-De Tzu, Ching Siun Chiu, Chue-San Yoo, and Jia-Jing Wang "Cost-effective DUV PSM process", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999);

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