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25 August 1999 Development of Cr-based attenuated phase-shift mask process for 0.18-μm device generation
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360215
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
Making attenuated phase shift masks for KrF excimer laser lithography is going to be on the mass production stage for the 0.18 micrometer critical hole and line layers. Here, key issues are phase controllability, critical dimension (CD) control on the mask and mask defect repair technique. To get a sufficient mask CD controllability, we use a chemically amplified negative EB resist with a 10 kV electron beam system. For a better phase mean to target control, we have applied Chrome-based attenuated phase shift blanks. The phase angle adjusted using post process of quartz etching after pattern defect inspection. To guarantee the CD error of repaired patterns on wafer, preliminary investigation of printability with repaired mask patterns is presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ichiro Kagami, Kiichi Ishikawa, Daichi Kakuta, and Hiroichi Kawahira "Development of Cr-based attenuated phase-shift mask process for 0.18-μm device generation", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360215
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