Translator Disclaimer
Paper
25 August 1999 Development of focused ion-beam repair for opaque defects on MoSi-based attenuated phase-shift mask
Author Affiliations +
Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360253
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
Focused-ion beam (FIB) repair technique is one of the important technologies for quality and productivity of attenuated phase shift mask (HT-PSM),especially for KrF lithography. Mainly, accurate and low damage technique are necessary for HT-PSM repair. Such requirements are satisfied with the improvement of gas-assisted etching (GAE) technique for FIB. New SIR-3000 made by Seiko Instruments has been developed for applying MoSi material etching. Using GAE technique, the transmittance evaluated from AIMS at repaired area was more than 99% (i-line), and 96 - 97% (KrF) without post process (Qz reference: 100%). The results indicate the focused-ion beam repair is applicable without post process to MoSi-based HT-PSM for KrF lithography. This paper report the characterization results of opaque defect repair on MoSi-based HT-PSM using new SIR-3000.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naoki Nishida, Yasuyuki Nishio, Hiroshi Kinoshita, Osamu Takaoka, Tomokazu Kozakai, and Kazuo Aita "Development of focused ion-beam repair for opaque defects on MoSi-based attenuated phase-shift mask", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360253
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top