25 August 1999 Evaluation of NLD mask dry etching system
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360255
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
An advanced photomask dry etching system (NLDE-9035 Prototype) has been evaluated. This system adopts new plasma source NLDE, and has a 230 mm mask capability. In this experiment, etching uniformity, selectivity and etching pattern profile were mainly evaluated. Etching uniformity of 20 nm (range) was obtained and good pattern fidelity was confirmed.
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Tatsuya Fujisawa, Tatsuya Fujisawa, Takayuki Iwamatsu, Takayuki Iwamatsu, Koji Hiruta, Koji Hiruta, Hiroaki Morimoto, Hiroaki Morimoto, Takaei Sasaki, Takaei Sasaki, Kazuhide Yamashiro, Kazuhide Yamashiro, } "Evaluation of NLD mask dry etching system", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360255; https://doi.org/10.1117/12.360255
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